threshold current density

The variations of threshold current density in a wide temperature range are analyzed and the negative characteristic temperature and oscillatory characteristic temperature appearing in that temperature range are discussed.

得出了较宽温度范围内阈值电流密度的变化，包括负温度及振荡温度效应。

The InGaAs/ GaAs strained quantum well lasers are able to work with extremely low threshold current density, high characteristic temperature and high COD limit, which make Ld lasers achieve higher output power and longer Ufe.

InGaAs/GaAs应变量子阱激光器具有级低的阈值电流密度、较高的特性温度和较高的光学灾变损伤阈值，这使得激光器具有更高的输出功率和更长的寿命。

Choosing three cases of Al-content of the waveguide layer and the cladding layer, we calculate and analyze the dependences of the optical confinement factor, maximal output power, vertical divergence angle, and threshold current density on the thickness of the waveguide layer.

选取了三种情况的波导层和限制层的铝组分，分别计算和分析了波导层厚度与激光器光限制因子、最大出光功率、垂直发散角和阈值电流密度的函数关系。

The experiments indicate that the use of source materials with high purity, BN effusion cells, and the cryopump in the system play important roles in reducing the threshold current density of the lasers and improving their optical and electrical performance.

实验表明，生长过程中采用高纯度的源材料，氮化硼的泻流盒以及生长系统中的低温泵等对降低器件的阈电流密度，改善激光器的光电性能起到重要作用。

Therefore, based on the consideration of both photocurrent increase factor due to transient ionization effects and threshold current density decrease factor due to displacement effects, we obtain an integrated LD optical response model of radiation effect.

因此，在综合考虑了瞬态电离效应的光电流增加因素和位移效应的阈值电流密度衰减因素的基础上，获得了LD辐射效应综合光学响应模型。

The results show that current spreading is one of the main influential fac-tors on the thermos-field distribution characteristics, and the effective method of decreasing tem-perature is to reduce the threshold current density.

计算结果表明，电流扩展是影响这种激光器热场特性的主要因素，降低阈值电流是减小温升的有效方法。

Low Threshold Current Density InGaAs/ GaAs/ AlGaAs Strained Quantum Well Lasers

低阈值电流密度INGaAs/GaAs/AlGaAs应变量子阱激光器

The device has a reinforced ridge waveguide structure. The threshold current obtained at 80K is about 0 5A, and the corresponding threshold current density is about 5kA/ cm 2.

该器件具有增强型脊型波导结构，在80K时阈值电流为0.5A，相应的阈值电流密度为5KA/cm2。

In particular, there is an optimal well number corresponding to the lowest threshold current density for MQW structure in the microcavity lasers.

特别是在微腔多量子阱结构中存在一个最佳阱数对应着阈值电流密度的最小值。

Through the analysis of the loss and threshold characteristics of a laser diode ( LD), the threshold current density of LD with external feedback is calculated, according to the theory of multi-beam interference and the definition of equivalent reflection factor.

通过对半导体激光器（LD）的损耗和阈值电流特性的分析，引入等效反射系数的概念，根据多光束干涉的原理，导出了在外腔反馈作用下LD的阈值电流公式。

We have numerically analyzed the single-model operation condition of the half-ring cavity laser and influence of the half-ring cavity structure on bending loss and threshold current density has been obtained.

数值分析了半环形激光器的单模工作条件，同时模拟分析了半环形结构对弯曲损耗及阈值电流密度的影响。

Through numerical calculation and analysis, the effects of structure parameters on far field pattern and threshold current density are studied.

通过数值计算分析，详细研究了结构参数对远场及阈值电流密度等的影响。

Measurements are made on the temperature dependence of threshold current density in DC-PBH 1.3 μ m InGaAsP/ InP laser under direct current.

测量了1.3μm InGaAsp/InP DC-PBH激光器在直流工作条件下，阀值电流密度随温度的变化。

Further, a maximal output power of 9.4W, vertical divergence angle of 32 °, and threshold current density of 239A/ cm2 can be obtained by adapting broad waveguide layers.

采用宽波导结构可以得到器件的最大输出功率为9.4W，发散角为32°，阈值电流密度为239A/cm2。

Calculated results show that when the Al-content of the waveguide and cladding layers are 0.4 and 0.5 respectively, a maximal output power of 11.2W, vertical divergence angle of 19 °, and threshold current density of 266A/ cm2 can be achieved by adapting narrow waveguide layers;

根据计算结果可知：当波导层和限制层铝组分为0.4和0.5时，采用窄波导结构可以获得器件的最大输出功率为11.2W，发散角为19°，阈值电流密度为266A/cm2；

Theoretical Analysis of Gain and Threshold Current Density for Long Wavelength GaAs-Based Quantum-Dot Lasers'

GaAs基长波长量子点激光器增益和阈值电流密度的理论分析（英文）

The doping concentration in the active region has great effect on the waveguide property. With the increasing of doping concentration, the waveguide loss, threshold gain and current density of THz QCL increase, the confinement factor decrease. 3.

结果表明，随着有源区掺杂浓度的提高，波导损耗增加，阈值电流增加，波导限制因子降低。

When the relative humidity of gas at the inlet is increase, the threshold current density is linearly decreased;

临界电流随阴极气体进口相对湿度的增加而线性下降；

Further analysis shows that it is caused by the enhancement of the threshold current density and threshold carrier density in terms of optical-gain spe.

进一步分析认为，这是因为条宽变窄导致器件阈值电流密度、阈值载流子密度变大造成的。

Our analysis of one particular structure has shown that a relatively low threshold current density of 832A/ cm2 can provide a threshold optical gain of 50/ cm at room temperature. We have also found that the characteristic temperature in this structure is as high as 136K.

分析显示，用一个相对较低的阈值电流密度（832A/cm2）能够实现室温下产生50/cm的阈值光学增益，而且这种结构的特征温度高于136K。

The analysis of one particular structure has shown that a relatively low threshold current density of 832 A/ cm~ 2 can provide a threshold optical gain of 50/ cm at room temperature.

理论分析显示，用一个相对较低的阈值电流密度（832A/cm2）就能在室温下产生50/cm的阈值光学增益。

The lowest threshold current density of 2000A/ cm~ 2 and average normalized threshold current density of 5000A/ cm~ 2. μ m were obtained under pulsed operation at room temperature.

室温下的最低阈电流密度是2000A/cm~2.平均归一化阈电流密度是5000A/cm~2μm。

Also, the improvement of quantum dot lasers' performance is investigated through vertical stacking and p-type doping and the optimal dot density, which corresponds to minimal threshold current density, is calculated.

研究了垂直层叠和p型掺杂对量子点激光器性能的改善，并讨论了获得极小阈值电流密度时的最佳量子点密度。

In order to give a low threshold current density, the curvature radius should be more about 150 μ m.

为了保持较低的阈值电流，本文建议曲率半径选择在15μm左右。